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  Datasheet File OCR Text:
 Semiconductor
SRA2212EF
PNP Silicon Transistor
Descriptions
* Switching application * Interface circuit and driver circuit application
Features
* * * * With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density
Ordering Information
Type NO. SRA2212EF Marking BR Package Code SOT-523F
Outline Dimensions
unit : mm
* Equivalent Circuit
1.600.1. 0.880.1.
C(OUT)
1
1.600.1 1.000.1
B(IN)
R1
3 2
0.25~0.30 R1 = 100K
E(COMMON)
+0.1 0.68 -0.05
0~0.1
1.110.05
PIN Connections 1. Base 2. Emitter 3. Collector
KSR-4036-000
1
SRA2212EF
Absolute maximum ratings
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25C)
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Ratings
-50 -50 -5 -100 150 150 -55 ~ 150
Unit
V V V mA mW C C
Electrical Characteristics
Characteristic
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance
(Ta=25C)
Symbol
ICBO IEBO hFE VCE(SAT) fT
*
Test Condition
VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA -
Min. Typ. Max.
120 -0.1 250 100 -500 -500 -0.3 -
Unit
nA nA V MHz K
R1
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
KSR-4036-000
2


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